The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Dec. 20, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyujin Kim, Seoul, KR;

Hui-Jung Kim, Seongnam-si, KR;

Junsoo Kim, Seongnam-si, KR;

Sangho Lee, Hwaseong-si, KR;

Jae-Hwan Cho, Suwon-si, KR;

Yoosang Hwang, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/311 (2013.01); H01L 21/7621 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/10876 (2013.01); H01L 29/4232 (2013.01); H01L 29/66621 (2013.01);
Abstract

A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.


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