The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Nov. 12, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Yu-Lin Yang, Baoshan Township, Hsinchu County, TW;
I-Sheng Chen, Taipei, TW;
Tzu-Chiang Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A gate-all-around structure including a first transistor is provided. The first transistor includes a semiconductor substrate having a top surface, and a first nanostructure over the top surface of the semiconductor substrate and between a first source and a first drain. The first transistor also includes a first gate structure around the first nanostructure, and an inner spacer between the first gate structure and the first source, wherein an interface between the inner spacer and the first gate structure is non-flat. The first transistor includes an isolation layer between the top surface of the semiconductor substrate and the first source and the first drain.