The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Sep. 13, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Yasuhito Yoshimizu, Yokkaichi, JP;

Yuji Setta, Kuwana, JP;

Masaru Kito, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/00 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 27/11573 (2017.01); H01L 25/00 (2006.01); H01L 25/18 (2006.01); H01L 21/225 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 21/2251 (2013.01); H01L 21/6835 (2013.01); H01L 24/05 (2013.01); H01L 24/89 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80201 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/2011 (2013.01);
Abstract

In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.


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