The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Sep. 25, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruqiang Bao, Niskayuna, NY (US);
Vijay Narayanan, New York, NY (US);
Terence B. Hook, Jericho, VT (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/51 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/2254 (2013.01); H01L 21/324 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 29/1033 (2013.01); H01L 29/517 (2013.01); H01L 21/0274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01);
Abstract
A semiconductor device including pairs of multiple threshold voltage (Vt) devices includes at least a first region corresponding to a first pair of Vt devices, a second region corresponding to a second pair of Vt devices including a first dipole layer, and a third region corresponding to a third pair of Vt devices including a second dipole layer different from the first dipole layer.