The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Apr. 11, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Jung Huang, Tuku Township, TW;
Li-Hsin Chu, New Taipei, TW;
Po-Feng Tsai, Taipei, TW;
Henry Peng, Hsinchu, TW;
Kuang Huan Hsu, Hsinchu, TW;
Tsung Wei Chen, New Taipei, TW;
Yung-Lin Hsu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a system and a method for a ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.