The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jul. 15, 2020
Ferroelectric Memory Gmbh, Dresden, DE;
FERROELECTRIC MEMORY GMBH, Dresden, DE;
Abstract
According to various aspects, a memory cell arrangement is provided, the memory cell arrangement including a control circuit configured to carry out a de-trapping writing scheme to write at least one memory cell of the memory cell arrangement into a memory state, the de-trapping writing scheme including providing one or more write voltage pulses and one or more de-trapping voltage pulses at the at least one memory cell, wherein the one or more de-trapping voltage pulses have opposite polarity with respect to the one or more write voltage pulses, and wherein one or more properties of the one or more write voltage pulses and of the one or more de-trapping voltage pulses are varied as long as the memory cell is not in the memory state.