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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11193335 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

Nov. 21, 2016

Polycrystalline diamond sintered material tool excellent in interfacial bonding strength and method of producing same

Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toshihiko Matsuo, Naka-gun, JP;

Wardoyo Akhmadi Eko, Naka-gun, JP;

Minoru Akaishi, Tsukuba, JP;

Assignee:

MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;

Attorney:

Leason Ellis LLP

Primary Examiner:

Pegah Parvini

Assistant Examiner:

Ross J Christie

Int. Cl.
CPC ...
E21B 10/573 (2006.01); B22F 3/10 (2006.01); B22F 7/06 (2006.01); B23B 27/20 (2006.01); C22C 29/08 (2006.01); B23B 27/14 (2006.01); B22F 7/00 (2006.01); B23B 27/18 (2006.01); B01J 23/75 (2006.01); C22C 26/00 (2006.01); C22C 29/06 (2006.01); B22F 5/00 (2006.01); C22C 1/05 (2006.01);
U.S. Cl.
CPC ...
E21B 10/5735 (2013.01); B01J 23/75 (2013.01); B22F 3/10 (2013.01); B22F 7/00 (2013.01); B22F 7/06 (2013.01); B23B 27/14 (2013.01); B23B 27/18 (2013.01); B23B 27/20 (2013.01); C22C 26/00 (2013.01); C22C 29/067 (2013.01); C22C 29/08 (2013.01); B22F 2005/001 (2013.01); B23B 2226/315 (2013.01); C22C 1/05 (2013.01); C22C 2204/00 (2013.01);
Abstract

A polycrystalline diamond sintered material tool includes: a cemented carbide substrate, which is mainly composed of WC and includes Co; and a diamond layer containing a metal catalyst made of Co provided on the cemented carbide substrate. The average layer thickness of a Co rich layer formed in an interface between the cemented carbide substrate and the diamond layer is 30 μm or less. C/Cis 2 or less when Cis an average content of Co included in the diamond layer and Cis a peak value of a Co content in the Co rich layer. D/Dis less than 2 when D is an average grain size of WC particles in a region from the interface between the cemented carbide substrate and the diamond layer to 50 μm toward an inside of the cemented carbide substrate; and Dis an average grain size of WC particles.

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