The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jul. 24, 2018
Applicant:

Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;

Inventors:

Toshiyuki Oie, Katsushika-ku, JP;

Priangga Perdana Putra, Katsushika-ku, JP;

Akinobu Horita, Katsushika-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 3/37 (2006.01); C11D 7/08 (2006.01); B08B 3/08 (2006.01); C11D 7/32 (2006.01); C11D 11/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C11D 7/08 (2013.01); B08B 3/08 (2013.01); C11D 7/3281 (2013.01); C11D 11/0047 (2013.01); H01L 21/02057 (2013.01);
Abstract

The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass, or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0/by mass)/(0.005 to 5.0% by mass), and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitably for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.


Find Patent Forward Citations

Loading…