The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Oct. 01, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Wei Su, Tainan, TW;
Da-Jun Lin, Kaohsiung, TW;
Bin-Siang Tsai, Changhua County, TW;
Ya-Jyuan Hung, Kaohsiung, TW;
Ting-An Chien, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a resistive random access memory cell includes the following steps. A first electrode layer, a blanket resistive switching material layer and a second electrode layer are formed on a layer sequentially. The second electrode layer is patterned to form a second electrode. The blanket resistive switching material layer is patterned to form a resistive switching material layer. An oxygen implanting process is performed to implant oxygen in two sidewall parts of the resistive switching material layer.