The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Feb. 13, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating an integrated circuit is provided. The method includes forming a memory cell over a substrate, wherein the memory cell comprising a top electrode, a bottom electrode, and a resistance switching element between the bottom electrode and the top electrode; forming a dielectric layer over the memory cell and the substrate; etching a via opening in the dielectric layer to expose the top electrode of the memory cell; forming a spacer in the via opening; performing a liner removal process to the dielectric layer after forming the spacer; and forming a conductive feature connected to the top electrode in the via opening.