The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Apr. 01, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangkoo Kang, Yongin-si, KR;
Sungsoo Kim, Hwaseong-si, KR;
Sunki Min, Seoul, KR;
Iksoo Kim, Yongin-si, KR;
Donghyun Roh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.