The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jan. 17, 2020
Micron Technology, Inc., Boise, ID (US);
David Ross Economy, Boise, ID (US);
Andrew Leslie Beemer, Sandy, UT (US);
Micron Technology, Boise, ID (US);
Abstract
Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.