The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Apr. 29, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Yimin Huang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/14689 (2013.01); H01L 29/0847 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/41783 (2013.01);
Abstract

An image sensor structure and manufacturing method thereof are provided. The image sensor structure includes a substrate with a first surface. A first doped region of a first conductivity type is in the substrate and under the first surface. A second doped region of a second conductivity type is in the substrate and under the first surface. A gate structure is on the first surface of the substrate and overlapping a boundary of the first doped region and the second doped region. The epitaxial structure is on the first surface of the substrate. A method for manufacturing an image sensor structure is also provided.


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