The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Dec. 18, 2018
Micron Technology, Inc., Boise, ID (US);
Oscar O. Enomoto, Manassas, VA (US);
Chin Chuan Liu, Taichung, TW;
Chia Wei Tsai, Taichung, TW;
Yu Jen Lin, Taichung, TW;
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming an apparatus comprises forming filled trenches within a semiconductive structure having a well region comprising one or more dopants, the filled trenches extending into the well region and each individually comprising a conductive gate structure and a dielectric liner intervening between the conductive gate structure and the semiconductive structure. A fluorine-doped region is formed at junctions between the well region and additional regions of the semiconductive structure overlying the well region. The additional regions of the semiconductive structure are doped with one or more additional dopants having a different conductivity type than that of the one or more dopants of the well region after forming the fluorine-doped region. The semiconductive structure is annealed after doping the additional regions thereof. Apparatuses, memory devices, and electronic systems also described.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile