The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 11, 2018
Ulvac, Inc., Kanagawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Masanobu Hatanaka, Kanagawa, JP;
Yohei Ogawa, Kanagawa, JP;
Keon-chang Lee, Kanagawa, JP;
Nobuyuki Kato, Kanagawa, JP;
Takakazu Yamada, Kanagawa, JP;
John Rozen, Hastings on Hudson, NY (US);
ULVAC, INC., Chigasaki, JP;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A thin film formation method includes setting a film formation subject to 200° C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CH), Al(CH)H, and Al(CH)Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.