The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Apr. 26, 2017
Applicant:
Young Chang Chemical Co., Ltd, Gyeongsangbuk-do, KR;
Inventors:
Assignee:
YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-do, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); G03F 7/32 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/327 (2013.01); G03F 7/038 (2013.01); G03F 7/0392 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01);
Abstract
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.