The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Mar. 05, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Michael Yu-tak Young, Cupertino, CA (US);

Ludovic Godet, Sunnyvale, CA (US);

Robert Jan Visser, Menlo Park, CA (US);

Naamah Argaman, San Jose, CA (US);

Christopher Dennis Bencher, Cupertino, CA (US);

Wayne McMillan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 26/08 (2006.01); G02B 5/18 (2006.01); G02B 30/26 (2020.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G02B 5/1857 (2013.01); G02B 26/0808 (2013.01); G02B 30/26 (2020.01); G02B 5/1876 (2013.01); G03F 7/0037 (2013.01);
Abstract

Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above 'n' times, and stripping the thick mask material from the material stack.


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