The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Dec. 02, 2018
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Shengwei Yang, Wuhan, CN;

Kun Han, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/14 (2006.01); G01R 31/12 (2020.01);
U.S. Cl.
CPC ...
G01R 31/14 (2013.01); G01R 31/129 (2013.01);
Abstract

A time dependent dielectric breakdown test structure includes a plurality of test units connected in parallel between a constant voltage and a ground. Each of the plurality of test units includes a dielectric test sample connected to the constant voltage; and a current restraint unit connected between the dielectric test sample and the ground, for restraining a breakdown current from flowing on the dielectric test sample after the constant voltage has broken the dielectric test sample.


Find Patent Forward Citations

Yang, Shengwei. (2021). Time dependent dielectric breakdown test structure and test method thereof (U.S. Patent No. 11187740). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11187740

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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