The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Dec. 06, 2019
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Nozomu Harada, Tokyo, JP;
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Abstract
The method for producing a pillar-shaped semiconductor device includes a step of providing a structure that includes, on an i layer substrate, a Si pillar and an impurity region located in a lower portion of the Si pillar and serving as a source or a drain, a step of forming a SiOlayer that extends in a horizontal direction and is connected to an entire periphery of the impurity region in plan view, a step of forming a SiOlayer on the SiOlayer such that the SiOlayer surrounds the Si pillar in plan view, a step of forming a resist layer that is partly connected to the SiOlayer in plan view, and a step of forming a SiOlayer by etching the SiOlayer below the SiOlayer and the resist layer using the SiOlayer and the resist layer as masks.