The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Jan. 16, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes an erase gate electrode, an erase gate dielectric, first and second floating gate electrodes, first and second control gate electrodes, a first select gate electrode, a second select gate electrode, a common source strap, and a silicide pad. The erase gate electrode is over a first portion of a substrate. The common source strap is over a second portion of the substrate, in which the common source strap and the erase gate electrode are arranged along a second direction perpendicular to the first direction. The silicide pad is under the common source strap and in the second portion of the substrate, wherein a top surface of the silicide pad is flatter than a bottom surface of the erase gate dielectric.