The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Nov. 12, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Wenyin Weng, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
A method for manufacturing a transistor device includes a field oxide layer isolates an active region of a core device region from an active region of an input/output device region on a semiconductor substrate, the active region of the core device region is exposed by means of a mask layer, a gate-all-around structure is formed in the active region of the core device region, and a fin gate structure is formed in the active region of the input/output device region, thereby the on-current and off-current performance of the input/output device is not affected when the short channel effect of the core device is improved.