The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Apr. 22, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Linlin Sun, Shanghai, CN;
Bo Su, Shanghai, CN;
Abstract
A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.