The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Apr. 02, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Li-Chun Tien, Tainan, TW;

Ting-Wei Chiang, New Taipei, TW;

Shun Li Chen, Tainan, TW;

Ting Yu Chen, Hsinchu, TW;

XinYong Wang, Shanghai, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G06F 30/394 (2020.01); H01L 23/528 (2006.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
G06F 30/394 (2020.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01);
Abstract

A semiconductor device includes: a conductive layer M(h) including first and second power grid (PG) segments and first routing segments which are conductive, where h is an integer and h≥1; long axes of the first and second PG segments and the first routing segments extending in a first direction; the first and second PG segments being separated in a second direction by a PG gap having a midpoint, the second direction being substantially perpendicular to the first direction. The first routing segments are distributed: between the first and second PG segments; and substantially uniformly in the second direction with respect to the midpoint of the PG gap.


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