The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Mar. 25, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Doohyun Lee, Hwaseong-si, KR;
Heonjong Shin, Yongin-si, KR;
Minchan Gwak, Hwaseong-si, KR;
Hyunho Park, Suwon-si, KR;
Sunghun Jung, Suwon-si, KR;
Yongsik Jeong, Suwon-si, KR;
Sangwon Jee, Hwaseong-si, KR;
Inchan Hwang, Siheung-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including: a substrate that includes a first active region and a second active region; a first source/drain pattern on the first active region; a second source/drain pattern on the second active region; a separation dielectric pattern on the substrate between the first source/drain pattern and the second source/drain pattern; and a first contact pattern on the first source/drain pattern, wherein the first contact pattern includes: a first metal pattern; a first barrier pattern between the first metal pattern and the first source/drain pattern; and a second barrier pattern between the first barrier pattern and the first source/drain pattern, wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.