The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
May. 13, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Kai Jin Huang, Wuhan, CN;
Jin Lyu, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/7682 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01);
Abstract
A three-dimensional (3D) memory device is provided and includes a substrate, an alternating stack and a channel structure. The alternating stack is disposed on the substrate, and the alternating stack includes a plurality of conductive layers and a plurality of air gap layers alternately stacked. The channel structure is disposed on the substrate and extends vertically through the conductive layers and the air gap layers. The alternating stack further includes a plurality of etching stop blocks between the air gap layers and the channel structure.