The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Apr. 29, 2020
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Si-Woo Lee, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Deepak Chandra Pandey, Uttarakhand, IN;
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions. A voltage source is coupled with the threshold-voltage-inducing-structure to electrostatically induce a desired threshold voltage along the first and second channel regions.