The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Nov. 04, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Guo-Chiang Chi, Hsinchu County, TW;
Chia-Der Chang, Hsinchu, TW;
Chih-Hung Lu, Hsinchu County, TW;
Wei-Chin Chen, Keelung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 23/485 (2006.01); H01L 21/311 (2006.01); H01L 21/283 (2006.01); H01L 21/762 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/283 (2013.01); H01L 21/28079 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/76224 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 23/485 (2013.01); H01L 29/0642 (2013.01); H01L 29/45 (2013.01); H01L 29/495 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01); H01L 29/51 (2013.01);
Abstract
A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.