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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11177148 B1

PDFFull Text
Date of Patent:
Nov. 16, 2021

Filed:

Jul. 20, 2018

Laser processing apparatus

Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Tsutomu Maeda, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:

Greer, Burns & Crain, Ltd.

Primary Examiner:

Tu B Hoang

Assistant Examiner:

Thomas J Ward

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/68 (2006.01); G06T 7/00 (2017.01); B23K 26/364 (2014.01); H01L 21/687 (2006.01); H01L 23/544 (2006.01); H01L 29/20 (2006.01); G06T 7/521 (2017.01);
U.S. Cl.
CPC ...
H01L 21/67282 (2013.01); B23K 26/364 (2015.10); G06T 7/0004 (2013.01); G06T 7/0006 (2013.01); H01L 21/681 (2013.01); H01L 21/68764 (2013.01); H01L 23/544 (2013.01); H01L 29/2003 (2013.01); G06T 7/521 (2017.01); G06T 2207/30148 (2013.01); H01L 21/67092 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2223/54493 (2013.01);
Abstract

A laser processing apparatus has a control unit including an inspection modified layer former detecting a provisional orientation flat of a bare wafer and applying a laser beam of a predetermined output power level to the bare wafer depending on the direction of the provisional orientation flat thereby to form a modified layer for detecting the crystal orientation closely to an outer edge of the bare wafer, and a crack detector detecting a crack extending from the modified layer toward a Y-axis and an exposed surface of the bare wafer, providing the modified layer extends along an X-axis in an image captured of the modified layer. If the crack detector detects no crack, the control unit determines the modified layer with no crack extending therefrom as extending parallel to the crystal orientation of the bare wafer.

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