The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jun. 19, 2019
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Guan-Wei Wu, Zhubei, TW;
Yao-Wen Chang, Zhubei, TW;
Chih-Chieh Cheng, Zhubei, TW;
I-Chen Yang, Miaoli County, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); H01L 27/1157 (2017.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5671 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H01L 27/1157 (2013.01);
Abstract
An operating method of a non-volatile memory includes: generating a first programming pulse with a first time period to a target memory cell in a memory array; reading and verifying whether a threshold voltage of the target memory cell reaches a target voltage level; and generating a second programming pulse with a second time period to the target memory cell when the threshold voltage of the target memory cell does not reach the target voltage level, wherein the second time period is longer than the first time period.