The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
May. 13, 2020
Winbond Electronics Corp., Taichung, TW;
Ping-Kun Wang, Taichung, TW;
Ming-Che Lin, Taichung, TW;
Yu-Ting Chen, Taichung, TW;
Chang-Tsung Pai, Taichung, TW;
Shao-Ching Liao, Taichung, TW;
Chi-Ching Liu, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
Provided is a resistive random access memory (RRAM) including at least one memory cell. The at least one memory cell includes a top electrode, a bottom electrode, a data storage layer, an oxygen gettering layer, a first barrier layer, and an oxygen supplying layer. The data storage layer is disposed between the top electrode and the bottom electrode. The oxygen gettering layer is disposed between the data storage layer and the top electrode. The first barrier layer is disposed between the oxygen gettering layer and the data storage layer. The oxygen supplying layer is disposed between the oxygen gettering layer and the top electrode and/or between the oxygen gettering layer and the first barrier layer.