The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

Jan. 20, 2020
Applicants:

Infineon Technologies Ag, Neubiberg, DE;

Pmdtechnologies Ag, Siegen, DE;

Inventors:

Stefano Parascandola, Dresden, DE;

Henning Feick, Dresden, DE;

Matthias Franke, Haiger, DE;

Dirk Offenberg, Dresden, DE;

Jens Prima, Siegen, DE;

Robert Roessler, Siegen, DE;

Michael Sommer, Siegen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 7/4914 (2020.01); G01S 7/4915 (2020.01); G01S 17/36 (2006.01); H04N 13/257 (2018.01);
U.S. Cl.
CPC ...
G01S 7/4914 (2013.01); G01S 7/4915 (2013.01); G01S 17/36 (2013.01); H01L 27/14603 (2013.01); H04N 13/257 (2018.05);
Abstract

An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.


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