The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Feb. 28, 2020
Applicant:
Globalfoundries U.s. Inc., Grand Cayman, KY;
Inventors:
John J. Pekarik, Underhill, VT (US);
Vibhor Jain, Williston, VT (US);
Assignee:
GLOBALPOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 29/0817 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector region; an intrinsic base region composed of intrinsic base material located above the collector region; an emitter located above and separated from the intrinsic base material; and a raised extrinsic base having a stepped configuration and separated from and self-aligned to the emitter.