The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Dec. 04, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Zhuo Cheng, Beijing, CN;
Xiaodong Wang, Beijing, CN;
Abstract
Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a wafer having a functional region and a non-functional region surrounding the functional region; forming a first dielectric layer on the wafer; forming a first opening in the first dielectric layer in the non-functional region; and forming a first connection layer in the first opening. The first connection layer closes a top portion of the first opening, and a void is formed in the first connection layer in first opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile