The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Mar. 12, 2020
Applicant:
Fei Company, Hillsboro, OR (US);
Inventors:
Sean O. Morgan-Jones, Portland, OR (US);
Sophia E. Weeks, Portland, OR (US);
Peter D. Carleson, Hillsboro, OR (US);
Assignee:
FEI Company, Hillsboro, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); G03F 1/84 (2013.01); H01L 21/02019 (2013.01);
Abstract
Adaptive endpoint detection is applied to delayering of a multi-layer sample utilizing a combination of dynamic and predetermined parameters. Tuned predetermined parameters, varying between layers of the sample, allow automated operation across multiple sites of a device. A semiconductor logic device is described, having a zone of thick metal layers and a zone of thin metal layers. The described techniques can be integrated with analysis operations and can be applied across a wide range of device types and manufacturing processes.