The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
May. 27, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01L 21/022 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01);
Abstract
A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.