The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Jan. 06, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Changsu Jeon, Hwaseong-si, KR;
Jungmin Oh, Incheon, KR;
Hyosan Lee, Hwaseong-si, KR;
Hoon Han, Anyang-si, KR;
Jinkyu Roh, Seoul, KR;
Hyojoong Yoon, Iksan-si, KR;
Dongwun Shin, Daejeon, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
DONGWOO FINE-CHEM CO., LTD., Iksan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/02019 (2013.01); H01L 21/02107 (2013.01); H01L 21/042 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01);
Abstract
A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.