The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Sep. 04, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Saya Shimomura, Komatsu Ishikawa, JP;
Tetsuya Ohno, Yokohama Kanagawa, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, first, second and third semiconductor regions, a first conductive portion, a gate electrode, and a second insulating portion. The first and second semiconductor regions are provided on the first semiconductor region. The third semiconductor regions are selectively provided respectively on the second semiconductor regions. The first conductive portion is provided inside the first semiconductor region with a first insulating portion interposed. The gate electrode is provided on the first conductive portion and the first insulating portion and separated from the first conductive portion. The gate electrode includes first and second electrode parts. The second insulating portion is provided between the first and second electrode parts. The second insulating portion includes first and second insulating parts. The second electrode is provided on the second and third semiconductor regions.