The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jan. 06, 2020
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/66242 (2013.01);
Abstract
A bipolar transistor includes an upper sub-collector layer, a collector layer, a base layer, an emitter layer, and a collector electrode. The collector layer is disposed on the upper sub-collector layer. The base layer is disposed on the collector layer. An emitter layer is disposed on the base layer. The collector electrode is disposed directly on a sidewall of the upper sub-collector layer.