The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jan. 26, 2018
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 21/0495 (2013.01); H01L 29/06 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer including first and second electrode forming surfaces and side surface, an anode electrode formed on the first electrode forming surface, a cathode electrode formed on the second electrode forming surface; an insulating film continuously formed from the first electrode forming surface to the side surface so as to cover the first edge. The side surface of the semiconductor layer is covered with the insulating film, so that a leak current flowing along the side surface is reduced. Further, the side surface is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.