The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Feb. 07, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Russell A. Benson, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1087 (2013.01); H01L 21/0217 (2013.01); H01L 21/02351 (2013.01); H01L 21/31111 (2013.01); H01L 27/10829 (2013.01);
Abstract
Systems, apparatuses, and methods related to atom implantation for passivation of pillar material are described. An example apparatus includes a pillar of a semiconductor device. The pillar may include a first portion (e.g., a passivation material) formed from silicon nitride and an underlying second portion formed from a conductive material. A region of the first portion opposite from an interface between the first portion and the underlying second portion may be implanted with atoms of an element different from silicon (Si) and nitrogen (N) to enhance passivation of the implanted region.