The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Mar. 12, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Benfu Lin, Singapore, SG;

Bo Yu, Singapore, SG;

Chim Seng Seet, Singapore, SG;

Kin Wai Tang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/01 (2006.01); H01L 21/70 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/016 (2013.01); H01L 21/707 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01);
Abstract

According to various embodiments, an integrated circuit may include an upper inter-level dielectric (ILD) layer, a lower ILD layer, and an interlayer arranged between the upper ILD layer and the lower ILD layer. The integrated circuit may further include a capacitor device and a resistor device. The capacitor device may include a top plate disposed in a first region of the interlayer and a bottom plate disposed in the lower ILD layer. The resistor device may include a resistive element and a plurality of vias disposed in a second region of the interlayer. The plurality of vias may extend from the resistive element to the lower ILD layer. A distance between the top plate and the lower ILD layer may be at least substantially equal to a height of each via of the plurality of vias.


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