The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jun. 26, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/265 (2006.01); H01L 27/088 (2006.01); H01L 21/266 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26533 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region.
Chen, Chun-Hung. (2021). Method of manufacturing semiconductor devices and a semiconductor device (U.S. Patent No. 11164746). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11164746
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile