The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Dec. 02, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vijay S. Ramesh, Boise, ID (US);

Allan Porterfield, Durham, NC (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 13/00 (2006.01); G06F 9/54 (2006.01); G06F 7/57 (2006.01); G06F 9/30 (2018.01);
U.S. Cl.
CPC ...
G11C 13/0023 (2013.01); G06F 7/57 (2013.01); G06F 9/3001 (2013.01); G06F 9/542 (2013.01); G06F 9/546 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2213/71 (2013.01);
Abstract

Systems, apparatuses, and methods related to extended memory communication subsystems for performing extended memory operations are described. An example method can include receiving, at a processing unit that is coupled between a host device and a non-volatile memory device, signaling indicative of a plurality of operations to be performed on data written to or read from the non-volatile memory device. The method can further include performing, at the processing unit, at least one operation of the plurality of operations in response to the signaling. The method can further include accessing a portion of a memory array in the non-volatile memory device. The method can further include transmitting additional signaling indicative of a command to perform one or more additional operations of the plurality of operations on the data written to or read from the non-volatile memory device.


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