The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jun. 15, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun-Chieh Mo, Kaohsiung, TW;
Shih-Chi Kuo, Yangmei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/222 (2013.01); H01L 27/249 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/085 (2013.01); H01L 45/122 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1675 (2013.01); H01L 27/2436 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01);
Abstract
A memory cell includes: a first electrode contact formed as a cylinder shape that extends along a first direction; a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact; and a second electrode contact coupled to the resistive material layer, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer.