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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158788 B1

PDFFull Text
Expired
Date of Patent:
Oct. 26, 2021

Filed:

Oct. 30, 2018

Atomic layer deposition and physical vapor deposition bilayer for additive patterning

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kevin W. Brew, Albany, NY (US);

Iqbal Rashid Saraf, Cobleskill, NY (US);

Injo Ok, Loudonville, NY (US);

Nicole Saulnier, Albany, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Randall Bluestone

Ryan, Mason & Lewis, LLP

Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/124 (2013.01); H01L 45/1683 (2013.01); G11C 11/5685 (2013.01); H01L 21/32139 (2013.01); H01L 21/76838 (2013.01); H01L 45/144 (2013.01); H01L 45/147 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes forming a memory element in a dielectric layer. A first conductive layer is deposited on the dielectric layer and the memory element by atomic layer deposition, and a second conductive layer is deposited on the first conductive layer by physical vapor deposition. In the method, the first and second conductive layers are patterned into an electrode on the memory element.

Find Patent Forward Citations

Brew, Kevin. (2021). Atomic layer deposition and physical vapor deposition bilayer for additive patterning (U.S. Patent No. 11158788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11158788

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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