The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jul. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Cheng Wu, Hsinchu County, TW;
Hung-Pin Ko, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11526 (2017.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11526 (2013.01); G11C 16/0441 (2013.01); G11C 16/08 (2013.01);
Abstract
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, a first FET, and a second FET formed over the substrate. The substrate has a first surface and a second surface, and the first surface and the second surface form a step. The first FET comprises a first gate dielectric layer over the first surface of the substrate. The second FET comprises a second gate dielectric layer thinner than the first gate dielectric layer over the second surface of the substrate.