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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158557 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Apr. 25, 2019

Semiconductor device with a passivation layer and method for producing thereof

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Jens Peter Konrath, Villach, AT;

Christian Hecht, Buckenhof, DE;

Roland Rupp, Lauf, DE;

Andre Kabakow, Grosshelfendorf, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Abul Kalam

Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01); H01L 21/308 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 27/06 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/70 (2006.01); H01L 29/872 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/283 (2013.01); H01L 21/28247 (2013.01); H01L 21/3081 (2013.01); H01L 21/56 (2013.01); H01L 23/29 (2013.01); H01L 23/3192 (2013.01); H01L 27/0629 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/47 (2013.01); H01L 29/66674 (2013.01); H01L 29/66901 (2013.01); H01L 29/70 (2013.01); H01L 29/7397 (2013.01); H01L 29/7801 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/808 (2013.01); H01L 29/8083 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/0615 (2013.01); H01L 29/0638 (2013.01); H01L 29/0661 (2013.01); H01L 29/4236 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10331 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/10346 (2013.01); H01L 2924/10373 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

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