The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Nov. 07, 2018
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Ching-Yi Hsu, Hsinchu, TW;

Pi-Kuang Chuang, Hsinchu, TW;

Po-Sheng Hu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01); H01L 21/76235 (2013.01); H01L 29/0649 (2013.01); H01L 27/0922 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a first trench, and a second trench. The substrate has a first region and a second region. The first trench is formed in the substrate within the first region. The first trench is surrounded by a first protrusion structure having a top portion and sidewalls. The second trench is formed in the substrate within the second region. The second trench is surrounded by a second protrusion structure having a top portion and sidewalls. The second trench is deeper than the first trench. The connection portion between the top portion and the sidewalls of the second protrusion structure has a greater radius of curvature than the connection portion between the top portion and the sidewalls of the first protrusion structure.


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