The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
May. 20, 2020
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventor:
Hiroki Yabe, Yokohama, JP;
Assignee:
SanDisk Technologies LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/04 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); G11C 16/26 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract
An apparatus is provided that includes a plurality of NAND strings having a common set of word lines. Each NAND string includes data memory cells for data storage and dummy memory cells connected in series with the data memory cells. A first group of NAND strings includes dummy memory cells with a first pattern of threshold voltages and a second group of NAND strings includes dummy memory cells with a second pattern of threshold voltages for separate isolation of data memory cells of the first and second groups of NAND strings from corresponding bit lines.