The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
May. 11, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract
An operation method for a 3D NAND flash having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of layers, the operation method includes defining a plurality of upper layers of the plurality of bit lines of the 3D NAND flash as a plurality of upper select gates and a top layer of the plurality of bit lines of the 3D NAND flash as a top dummy layer; and applying a first voltage on a first top dummy layer of a select bit line of the plurality of bit lines to turn on the first top dummy layer of the select bit line of the plurality of bit lines when programming.